Transistor concepts based on lateral heterostructures of metallic and semiconducting phases of MoS\(...
Transistor concepts based on lateral heterostructures of metallic and semiconducting phases of MoS\(_2\)
About this item
Full title
Author / Creator
Publisher
Ithaca: Cornell University Library, arXiv.org
Journal title
Language
English
Formats
Publication information
Publisher
Ithaca: Cornell University Library, arXiv.org
Subjects
More information
Scope and Contents
Contents
In this paper we propose two transistor concepts based on lateral heterostructures of monolayer MoS\(_2\), composed of adjacent regions of 1T (metallic) and 2H (semiconducting) phases, inspired by recent research showing the possibility to obtain such heterostructures by electron beam irradiation. The first concept, the lateral heterostructure fiel...
Alternative Titles
Full title
Transistor concepts based on lateral heterostructures of metallic and semiconducting phases of MoS\(_2\)
Authors, Artists and Contributors
Identifiers
Primary Identifiers
Record Identifier
TN_cdi_proquest_journals_2071955846
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2071955846
Other Identifiers
E-ISSN
2331-8422
DOI
10.48550/arxiv.1804.00134
