First principle investigation of Tunnel FET based on nanoribbons from topological two-dimensional ma...
First principle investigation of Tunnel FET based on nanoribbons from topological two-dimensional material
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Ithaca: Cornell University Library, arXiv.org
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English
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Ithaca: Cornell University Library, arXiv.org
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We explore nanoribbons from topological two-dimensional stanene as channel material in tunnel field effect transistors. This novel technological option offers the possibility to build pure one-dimensional (1D) channel devices (comprised of a 1D chain of atoms) due to localized states in correspondence of the nanoribbon edges. The investigation is b...
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Full title
First principle investigation of Tunnel FET based on nanoribbons from topological two-dimensional material
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TN_cdi_proquest_journals_2071985869
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2071985869
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E-ISSN
2331-8422
DOI
10.48550/arxiv.1804.03440
