Electronic properties of WS\(_2\) on epitaxial graphene on SiC(0001)
Electronic properties of WS\(_2\) on epitaxial graphene on SiC(0001)
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Ithaca: Cornell University Library, arXiv.org
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English
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Ithaca: Cornell University Library, arXiv.org
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This work reports an electronic and micro-structural study of an appealing system for optoelectronics: tungsten disulphide WS\(_2\) on epitaxial graphene (EG) on SiC(0001). The WS\(_2\) is grown via chemical vapor deposition (CVD) onto the EG. Low-energy electron diffraction (LEED) measurements assign the zero-degree orientation as the preferential...
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Electronic properties of WS\(_2\) on epitaxial graphene on SiC(0001)
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TN_cdi_proquest_journals_2076685115
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2076685115
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E-ISSN
2331-8422
