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Stacking transition in bilayer graphene caused by thermally activated rotation

Stacking transition in bilayer graphene caused by thermally activated rotation

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2080463616

Stacking transition in bilayer graphene caused by thermally activated rotation

About this item

Full title

Stacking transition in bilayer graphene caused by thermally activated rotation

Publisher

Ithaca: Cornell University Library, arXiv.org

Journal title

arXiv.org, 2016-12

Language

English

Formats

Publication information

Publisher

Ithaca: Cornell University Library, arXiv.org

More information

Scope and Contents

Contents

Crystallographic alignment between two-dimensional crystals in van der Waals heterostructures brought a number of profound physical phenomena, including observation of Hofstadter butterfly and topological currents, and promising novel applications, such as resonant tunnelling transistors. Here, by probing the electronic density of states in graphen...

Alternative Titles

Full title

Stacking transition in bilayer graphene caused by thermally activated rotation

Identifiers

Primary Identifiers

Record Identifier

TN_cdi_proquest_journals_2080463616

Permalink

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2080463616

Other Identifiers

E-ISSN

2331-8422

DOI

10.48550/arxiv.1612.02248

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