Lateral Heterostructure Field-Effect Transistors Based on 2D-Material Stacks With Varying Thickness...
Lateral Heterostructure Field-Effect Transistors Based on 2D-Material Stacks With Varying Thickness and Energy Filtering Source
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Ithaca: Cornell University Library, arXiv.org
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English
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Ithaca: Cornell University Library, arXiv.org
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The bandgap dependence on the number of atomic layers of some families of 2D-materials, can be exploited to engineer and use lateral heterostructures (LHs) as high-performance Field-Effect Transistors (FET). This option can provide very good lattice matching as well as high heterointerface quality. More importantly, this bandgap modulation with lay...
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Lateral Heterostructure Field-Effect Transistors Based on 2D-Material Stacks With Varying Thickness and Energy Filtering Source
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TN_cdi_proquest_journals_2335356723
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2335356723
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2331-8422
