Gate-tunable non-volatile photomemory effect in MoS\(_2\) transistors
Gate-tunable non-volatile photomemory effect in MoS\(_2\) transistors
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Ithaca: Cornell University Library, arXiv.org
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English
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Ithaca: Cornell University Library, arXiv.org
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Contents
Non-volatile memory devices have been limited to flash architectures that are complex devices. Here, we present a unique photomemory effect in MoS\(_2\) transistors. The photomemory is based on a photodoping effect - a controlled way of manipulating the density of free charges in monolayer MoS\(_2\) using a combination of laser exposure and gate vo...
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Full title
Gate-tunable non-volatile photomemory effect in MoS\(_2\) transistors
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TN_cdi_proquest_journals_2414585513
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2414585513
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E-ISSN
2331-8422
DOI
10.48550/arxiv.2006.09986
