Alloy Stability of Ge1−xSnx with Sn Concentrations up to 17% Utilizing Low-Temperature Molecular Bea...
Alloy Stability of Ge1−xSnx with Sn Concentrations up to 17% Utilizing Low-Temperature Molecular Beam Epitaxy
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New York: Springer US
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English
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New York: Springer US
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Contents
The binary alloy germanium tin has already been presented as a direct group IV semiconductor at high tin concentrations and specific strain. Therefore, it offers a promising approach for the monolithic integrated light source towards the optical on-chip communication on silicon. However, the main challenge faced by many researchers is the achieveme...
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Full title
Alloy Stability of Ge1−xSnx with Sn Concentrations up to 17% Utilizing Low-Temperature Molecular Beam Epitaxy
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TN_cdi_proquest_journals_2433611178
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2433611178
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ISSN
0361-5235
E-ISSN
1543-186X
DOI
10.1007/s11664-020-08188-6
