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Towards twin-free molecular beam epitaxy of 2D chalcogenides explained by stronger interlayer van de...

Towards twin-free molecular beam epitaxy of 2D chalcogenides explained by stronger interlayer van de...

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2449557295

Towards twin-free molecular beam epitaxy of 2D chalcogenides explained by stronger interlayer van der Waals coupling

About this item

Full title

Towards twin-free molecular beam epitaxy of 2D chalcogenides explained by stronger interlayer van der Waals coupling

Publisher

Ithaca: Cornell University Library, arXiv.org

Journal title

arXiv.org, 2020-10

Language

English

Formats

Publication information

Publisher

Ithaca: Cornell University Library, arXiv.org

More information

Scope and Contents

Contents

Defect-free epitaxial growth of 2D materials is one of the holy grails for a successful integration of van der Waals (vdW) materials in the semiconductor industry. The large-area (quasi-)vdW epitaxy of layered 2D chalcogenides is consequently carefully being researched since these materials hold very promising properties for future nanoelectronic a...

Alternative Titles

Full title

Towards twin-free molecular beam epitaxy of 2D chalcogenides explained by stronger interlayer van der Waals coupling

Identifiers

Primary Identifiers

Record Identifier

TN_cdi_proquest_journals_2449557295

Permalink

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2449557295

Other Identifiers

E-ISSN

2331-8422

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