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Engineering local strain for single-atom nuclear acoustic resonance in silicon

Engineering local strain for single-atom nuclear acoustic resonance in silicon

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2567812268

Engineering local strain for single-atom nuclear acoustic resonance in silicon

About this item

Full title

Engineering local strain for single-atom nuclear acoustic resonance in silicon

Publisher

Ithaca: Cornell University Library, arXiv.org

Journal title

arXiv.org, 2021-08

Language

English

Formats

Publication information

Publisher

Ithaca: Cornell University Library, arXiv.org

More information

Scope and Contents

Contents

Mechanical strain plays a key role in the physics and operation of nanoscale semiconductor systems, including quantum dots and single-dopant devices. Here we describe the design of a nanoelectronic device where a single nuclear spin is coherently controlled via nuclear acoustic resonance (NAR) through the local application of dynamical strain. The...

Alternative Titles

Full title

Engineering local strain for single-atom nuclear acoustic resonance in silicon

Authors, Artists and Contributors

Identifiers

Primary Identifiers

Record Identifier

TN_cdi_proquest_journals_2567812268

Permalink

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2567812268

Other Identifiers

E-ISSN

2331-8422

DOI

10.48550/arxiv.2108.13234

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