Origin of interface limitation in CuInS\(_2\) based solar cells
Origin of interface limitation in CuInS\(_2\) based solar cells
About this item
Full title
Author / Creator
Publisher
Ithaca: Cornell University Library, arXiv.org
Journal title
Language
English
Formats
Publication information
Publisher
Ithaca: Cornell University Library, arXiv.org
Subjects
More information
Scope and Contents
Contents
Copper indium disulfide (CuInS\(_2\)) grown under Cu-rich conditions exhibits high optical quality but suffers predominantly from charge carrier interface recombination resulting in poor solar cell performance. An unfavorable cliff like conduction band alignment at the buffer/CuInS\(_2\) interface could be a possible cause of enhanced interface rec...
Alternative Titles
Full title
Origin of interface limitation in CuInS\(_2\) based solar cells
Authors, Artists and Contributors
Identifiers
Primary Identifiers
Record Identifier
TN_cdi_proquest_journals_2581961885
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2581961885
Other Identifiers
E-ISSN
2331-8422
DOI
10.48550/arxiv.2110.06555
