Near-Surface Electrical Characterisation of Silicon Electronic Devices Using Focused keV Ions
Near-Surface Electrical Characterisation of Silicon Electronic Devices Using Focused keV Ions
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Ithaca: Cornell University Library, arXiv.org
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English
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Ithaca: Cornell University Library, arXiv.org
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Contents
The demonstration of universal quantum logic operations near the fault-tolerance threshold establishes ion-implanted near-surface donor atoms as a plausible platform for scalable quantum computing in silicon. The next technological step forward requires a deterministic fabrication method to create large-scale arrays of donors, featuring few hundred...
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Full title
Near-Surface Electrical Characterisation of Silicon Electronic Devices Using Focused keV Ions
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TN_cdi_proquest_journals_2623495455
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2623495455
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E-ISSN
2331-8422
DOI
10.48550/arxiv.2201.11339
