Tuning carrier density and phase transitions in oxide semiconductors using focused ion beams
Tuning carrier density and phase transitions in oxide semiconductors using focused ion beams
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Ithaca: Cornell University Library, arXiv.org
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English
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Ithaca: Cornell University Library, arXiv.org
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We demonstrate spatial modification of the optical properties of thin-film metal oxides, zinc oxide and vanadium dioxide as representatives, using a commercial focused ion beam (FIB) system. Using a Ga+ FIB and thermal annealing, we demonstrated variable doping of a band semiconductor, zinc oxide (ZnO), achieving carrier concentrations from 10^18 c...
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Tuning carrier density and phase transitions in oxide semiconductors using focused ion beams
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TN_cdi_proquest_journals_2625415338
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2625415338
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2331-8422
