Dilute Rhenium Doping and its Impact on Intrinsic Defects in MoS2
Dilute Rhenium Doping and its Impact on Intrinsic Defects in MoS2
About this item
Full title
Author / Creator
Publisher
Ithaca: Cornell University Library, arXiv.org
Journal title
Language
English
Formats
Publication information
Publisher
Ithaca: Cornell University Library, arXiv.org
Subjects
More information
Scope and Contents
Contents
Substitutionally-doped 2D transition metal dichalcogenides are primed for next-generation device applications such as field effect transistors (FET), sensors, and optoelectronic circuits. In this work, we demonstrate substitutional Rhenium (Re) doping of MoS2 monolayers with controllable concentrations down to 500 parts-per-million (ppm) by metal-o...
Alternative Titles
Full title
Dilute Rhenium Doping and its Impact on Intrinsic Defects in MoS2
Authors, Artists and Contributors
Identifiers
Primary Identifiers
Record Identifier
TN_cdi_proquest_journals_2771816585
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2771816585
Other Identifiers
E-ISSN
2331-8422
