Switching performance assessment of gate-all-around InAs–Si vertical TFET with triple metal gate, a...
Switching performance assessment of gate-all-around InAs–Si vertical TFET with triple metal gate, a simulation study
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Heidelberg: Springer Nature B.V
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English
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Heidelberg: Springer Nature B.V
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This study presents a gate-all-around InAs–Si vertical tunnel field-effect transistor with a triple metal gate (VTG-TFET). We obtained improved switching characteristics for the proposed design because of the improved electrostatic control on the channel and the narrow bandgap source. It shows an Ion of 392 μA/μm, an Ioff of 8.8 × 10−17 A/μm, an Io...
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Full title
Switching performance assessment of gate-all-around InAs–Si vertical TFET with triple metal gate, a simulation study
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TN_cdi_proquest_journals_2785485418
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2785485418
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ISSN
1931-7573
E-ISSN
1556-276X
DOI
10.1186/s11671-023-03816-6
