The investigation of current-transport mechanisms (CTMs) in the Al/(In2S3:PVA)/p-Si (MPS)-type Schot...
The investigation of current-transport mechanisms (CTMs) in the Al/(In2S3:PVA)/p-Si (MPS)-type Schottky barrier diodes (SBDs) at low and intermediate temperatures
About this item
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Author / Creator
Publisher
New York: Springer US
Journal title
Language
English
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Publication information
Publisher
New York: Springer US
Subjects
More information
Scope and Contents
Contents
The current-transport mechanisms (CTMs) and temperature sensitivities (
S
) of the Al/(In
2
S
3
-PVA)/p-Si SBDs have been investigated using
I–V
measurements between 80 and 320 K. The log
I
F
–V
F
curves show two linear parts in the forward bias region and saturation current (
I
o
), ideality factor (...
Alternative Titles
Full title
The investigation of current-transport mechanisms (CTMs) in the Al/(In2S3:PVA)/p-Si (MPS)-type Schottky barrier diodes (SBDs) at low and intermediate temperatures
Authors, Artists and Contributors
Author / Creator
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Primary Identifiers
Record Identifier
TN_cdi_proquest_journals_2816233239
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2816233239
Other Identifiers
ISSN
0957-4522
E-ISSN
1573-482X
DOI
10.1007/s10854-023-10592-7
