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The investigation of current-transport mechanisms (CTMs) in the Al/(In2S3:PVA)/p-Si (MPS)-type Schottky barrier diodes (SBDs) at low and intermediate temperatures

Author / Creator:Demirezen, S. ; Arslan Alsaç, A. ; Çetinkaya, H. G. ; Altındal, Ş.

Publisher:New York: Springer US

Journal title:Journal of materials science. Materials in electronics, 2023-05, Vol.34 (14), p.1186, Article 1186