Impact of SiO2 hardmask on the DC and RF characteristics of InP HEMTs
Impact of SiO2 hardmask on the DC and RF characteristics of InP HEMTs
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Author / Creator
Zhou, Fugui , Feng, Ruize , Cao, Shurui , Feng, Zhiyu , Liu, Tong , Su, Yongbo , Shi, Jingyuan , Din, Wuchang and Jin, Zhi
Publisher
New York: Springer US
Journal title
Language
English
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Publisher
New York: Springer US
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Contents
In this letter, we investigate the trade-off between parasitic capacitance and parasitic resistance of lattice-matched InP high-electron mobility transistors (HEMTs) with a double-recessed gate process.
L
g
= 80 nm HEMTs with and without SiO
2
hardmask are used to adjust parasitic capacitance and parasitic resistance. And their DC a...
Alternative Titles
Full title
Impact of SiO2 hardmask on the DC and RF characteristics of InP HEMTs
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Author / Creator
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Record Identifier
TN_cdi_proquest_journals_2879456727
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2879456727
Other Identifiers
ISSN
0957-4522
E-ISSN
1573-482X
DOI
10.1007/s10854-023-11404-8
