Effect of Etching Duration on the Morphological and Opto-Electrical Properties of Silicon Nanowires...
Effect of Etching Duration on the Morphological and Opto-Electrical Properties of Silicon Nanowires Obtained by Ag-Assisted Chemical Etching
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Dordrecht: Springer Netherlands
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Language
English
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Dordrecht: Springer Netherlands
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Silicon nanowires (SiNWs) were obtained on p-Si (100) substrate by Ag-assisted chemical etching method in two-step process. The influence of the etching duration on the morphological, optical and electrical properties of SiNWs samples was investigated. SEM images show clearly the presence of nanowires and the existence of porous silicon structure e...
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Full title
Effect of Etching Duration on the Morphological and Opto-Electrical Properties of Silicon Nanowires Obtained by Ag-Assisted Chemical Etching
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TN_cdi_proquest_journals_2919516309
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2919516309
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ISSN
1876-990X
E-ISSN
1876-9918
DOI
10.1007/s12633-020-00416-2
