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Layer-Dependent Charge State Lifetime of Single Se Vacancies in WSe\(_2\)

Layer-Dependent Charge State Lifetime of Single Se Vacancies in WSe\(_2\)

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_3076831733

Layer-Dependent Charge State Lifetime of Single Se Vacancies in WSe\(_2\)

About this item

Full title

Layer-Dependent Charge State Lifetime of Single Se Vacancies in WSe\(_2\)

Publisher

Ithaca: Cornell University Library, arXiv.org

Journal title

arXiv.org, 2024-07

Language

English

Formats

Publication information

Publisher

Ithaca: Cornell University Library, arXiv.org

More information

Scope and Contents

Contents

Defect engineering in two-dimensional semiconductors has been exploited to tune the optoelectronic properties and introduce new quantum states in the band gap. Chalcogen vacancies in transition metal dichalcogenides in particular have been found to strongly impact charge carrier concentration and mobility in 2D transistors as well as feature sub-ga...

Alternative Titles

Full title

Layer-Dependent Charge State Lifetime of Single Se Vacancies in WSe\(_2\)

Identifiers

Primary Identifiers

Record Identifier

TN_cdi_proquest_journals_3076831733

Permalink

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_3076831733

Other Identifiers

E-ISSN

2331-8422

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