Bias dependent band alignment in Ga2O3 ferroelectric interface by operando HAXPES
Bias dependent band alignment in Ga2O3 ferroelectric interface by operando HAXPES
About this item
Full title
Bias dependent band alignment in Ga2O3 ferroelectric interface by operando HAXPES
Author / Creator
Publisher
London: Nature Publishing Group UK
Journal title
Scientific reports, 2025-03, Vol.15 (1), p.8016
Language
English
Formats
Publication information
Publisher
London: Nature Publishing Group UK
Subjects
More information
Scope and Contents
Contents
We present a fundamental study of the band alignment at the interface of HfZrO
4
(HZO) with Ge-doped Ga
2
O
3
. Ge is an alternative
n
-type dopant for the wide band gap Ga
2
O
3
due to its shallow donor level and favorable MBE growth conditions. In the perspective of using the ferroelectric polarization of hafni...
Alternative Titles
Full title
Bias dependent band alignment in Ga2O3 ferroelectric interface by operando HAXPES
Authors, Artists and Contributors
Identifiers
Primary Identifiers
Record Identifier
TN_cdi_proquest_journals_3174952911
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_3174952911
Other Identifiers
E-ISSN
2045-2322
DOI
10.1038/s41598-025-90555-6
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