Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent...
Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronics
About this item
Full title
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Publisher
London: Nature Publishing Group UK
Journal title
Language
English
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Publisher
London: Nature Publishing Group UK
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Scope and Contents
Contents
The celebrated electronic properties of graphene
1
,
2
have opened the way for materials just one atom thick
3
to be used in the post-silicon electronic era
4
. An important milestone was the creation of heterostructures based on graphene and other two-dimensional crystals, which can be assembled into three-dimensional stack...
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Full title
Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronics
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Record Identifier
TN_cdi_proquest_miscellaneous_1284622356
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_miscellaneous_1284622356
Other Identifiers
ISSN
1748-3387
E-ISSN
1748-3395
DOI
10.1038/nnano.2012.224
