Wafer-scale arrayed p-n junctions based on few-layer epitaxial GaTe
Wafer-scale arrayed p-n junctions based on few-layer epitaxial GaTe
About this item
Full title
Author / Creator
Yuan, Xiang , Tang, Lei , Wang, Peng , Chen, Zhigang , Zou, Yichao , Su, Xiaofeng , Zhang, Cheng , Liu, Yanwen , Wang, Weiyi , Liu, Cong , Chen, Fansheng , Zou, Jin , Zhou, Peng , Hu, Weida and Xiu, Faxian
Publisher
Beijing: Tsinghua University Press
Journal title
Language
English
Formats
Publication information
Publisher
Beijing: Tsinghua University Press
Subjects
More information
Scope and Contents
Contents
Two-dimensional （2D） materials have attracted substantial attention in electronic and optoelectronic applications with the superior advantages of being flexible, transparent, and highly tunable. Gapless graphene exhibits ultra-broadband and fast photoresponse while the 2D semiconducting MoS2 and GaTe exhibit high sensitivity and tunable responsivit...
Alternative Titles
Full title
Wafer-scale arrayed p-n junctions based on few-layer epitaxial GaTe
Authors, Artists and Contributors
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Primary Identifiers
Record Identifier
TN_cdi_proquest_miscellaneous_1762091243
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_miscellaneous_1762091243
Other Identifiers
ISSN
1998-0124
E-ISSN
1998-0000
DOI
10.1007/s12274-015-0833-8
