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Improved Light Output Power of Chemically Transferred InGaN/GaN Light-Emitting Diodes for Flexible O...

Improved Light Output Power of Chemically Transferred InGaN/GaN Light-Emitting Diodes for Flexible O...

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_miscellaneous_1770315681

Improved Light Output Power of Chemically Transferred InGaN/GaN Light-Emitting Diodes for Flexible Optoelectronic Applications

About this item

Full title

Improved Light Output Power of Chemically Transferred InGaN/GaN Light-Emitting Diodes for Flexible Optoelectronic Applications

Publisher

Cairo, Egypt: Hindawi Publishing Corporation

Journal title

Journal of nanomaterials, 2015-01, Vol.2015 (2015), p.1-6

Language

English

Formats

Publication information

Publisher

Cairo, Egypt: Hindawi Publishing Corporation

More information

Scope and Contents

Contents

Recent needs of semiconductor lighting sources have pursued diverse functionalities such as flexibility and transparency under high quantum efficiency. Inorganic/organic hybrid light-emitting diodes (LEDs) are one way to meet these requirements. Here, we report on flexible III-nitride-based LEDs and the improvement of their electrical and optical p...

Alternative Titles

Full title

Improved Light Output Power of Chemically Transferred InGaN/GaN Light-Emitting Diodes for Flexible Optoelectronic Applications

Identifiers

Primary Identifiers

Record Identifier

TN_cdi_proquest_miscellaneous_1770315681

Permalink

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_miscellaneous_1770315681

Other Identifiers

ISSN

1687-4110

E-ISSN

1687-4129

DOI

10.1155/2015/142096

How to access this item