Improved Light Output Power of Chemically Transferred InGaN/GaN Light-Emitting Diodes for Flexible O...
Improved Light Output Power of Chemically Transferred InGaN/GaN Light-Emitting Diodes for Flexible Optoelectronic Applications
About this item
Full title
Author / Creator
Publisher
Cairo, Egypt: Hindawi Publishing Corporation
Journal title
Language
English
Formats
Publication information
Publisher
Cairo, Egypt: Hindawi Publishing Corporation
Subjects
More information
Scope and Contents
Contents
Recent needs of semiconductor lighting sources have pursued diverse functionalities such as flexibility and transparency under high quantum efficiency. Inorganic/organic hybrid light-emitting diodes (LEDs) are one way to meet these requirements. Here, we report on flexible III-nitride-based LEDs and the improvement of their electrical and optical p...
Alternative Titles
Full title
Improved Light Output Power of Chemically Transferred InGaN/GaN Light-Emitting Diodes for Flexible Optoelectronic Applications
Authors, Artists and Contributors
Identifiers
Primary Identifiers
Record Identifier
TN_cdi_proquest_miscellaneous_1770315681
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_miscellaneous_1770315681
Other Identifiers
ISSN
1687-4110
E-ISSN
1687-4129
DOI
10.1155/2015/142096