Subthreshold Schottky-barrier thin-film transistors with ultralow power and high intrinsic gain
Subthreshold Schottky-barrier thin-film transistors with ultralow power and high intrinsic gain
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Publisher
United States: American Association for the Advancement of Science
Journal title
Language
English
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Publisher
United States: American Association for the Advancement of Science
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Scope and Contents
Contents
The quest for low power becomes highly compelling in newly emerging application areas related to wearable devices in the Internet of Things. Here, we report on a Schottky-barrier indium-gallium-zinc-oxide thin-film transistor operating in the deep subthreshold regime (i.e., near the OFF state) at low supply voltages (<1 volt) and ultralow power (<1...
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Full title
Subthreshold Schottky-barrier thin-film transistors with ultralow power and high intrinsic gain
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Record Identifier
TN_cdi_proquest_miscellaneous_1864528300
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_miscellaneous_1864528300
Other Identifiers
ISSN
0036-8075
E-ISSN
1095-9203
DOI
10.1126/science.aah5035
