Vertically integrated, three-dimensional nanowire complementary metal-oxide-semiconductor circuits
Vertically integrated, three-dimensional nanowire complementary metal-oxide-semiconductor circuits
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Publisher
United States: National Academy of Sciences
Journal title
Language
English
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Publisher
United States: National Academy of Sciences
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Scope and Contents
Contents
Three-dimensional (3D), multi-transistor-layer, integrated circuits represent an important technological pursuit promising advantages in integration density, operation speed, and power consumption compared with 2D circuits. We report fully functional, 3D integrated complementary metal-oxide-semiconductor (CMOS) circuits based on separate interconne...
Alternative Titles
Full title
Vertically integrated, three-dimensional nanowire complementary metal-oxide-semiconductor circuits
Authors, Artists and Contributors
Author / Creator
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Record Identifier
TN_cdi_proquest_miscellaneous_734200138
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_miscellaneous_734200138
Other Identifiers
ISSN
0027-8424
E-ISSN
1091-6490
DOI
10.1073/pnas.0911713106
