Very Large Capacitance Enhancement in a Two-Dimensional Electron System
Very Large Capacitance Enhancement in a Two-Dimensional Electron System
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Full title
Author / Creator
Li, Lu , Richter, C. , Paetel, S. , Kopp, T. , Mannhart, J. and Ashoori, R. C.
Publisher
Washington, DC: American Association for the Advancement of Science
Journal title
Language
English
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Publication information
Publisher
Washington, DC: American Association for the Advancement of Science
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Scope and Contents
Contents
Increases in the gate capacitance of field-effect transistor structures allow the production of lower-power devices that are compatible with higher clock rates, driving the race for developing high-κ dielectrics. However, many-body effects in an electronic system can also enhance capacitance. Onto the electron system that forms at the LaAlO₃/SrTiO₃...
Alternative Titles
Full title
Very Large Capacitance Enhancement in a Two-Dimensional Electron System
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Record Identifier
TN_cdi_proquest_miscellaneous_907940272
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_miscellaneous_907940272
Other Identifiers
ISSN
0036-8075
E-ISSN
1095-9203
DOI
10.1126/science.1204168
