Hot Carrier-Assisted Intrinsic Photoresponse in Graphene
Hot Carrier-Assisted Intrinsic Photoresponse in Graphene
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Publisher
Washington, DC: American Association for the Advancement of Science
Journal title
Language
English
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Publisher
Washington, DC: American Association for the Advancement of Science
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Scope and Contents
Contents
We report on the intrinsic optoelectronic response of high-quality dual-gated monolayer and bilayer graphene p-n junction devices. Local laser excitation (of wavelength 850 nanometers) at the p-n interface leads to striking six-fold photovoltage patterns as a function of bottom-and top-gate voltages. These patterns, together with the measured spati...
Alternative Titles
Full title
Hot Carrier-Assisted Intrinsic Photoresponse in Graphene
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Record Identifier
TN_cdi_proquest_miscellaneous_963892756
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_miscellaneous_963892756
Other Identifiers
ISSN
0036-8075
E-ISSN
1095-9203
DOI
10.1126/science.1211384
