High-frequency self-aligned graphene transistors with transferred gate stacks
High-frequency self-aligned graphene transistors with transferred gate stacks
About this item
Full title
Author / Creator
Cheng, Rui , Bai, Jingwei , Liao, Lei , Zhou, Hailong , Chen, Yu , Liu, Lixin , Lin, Yung-Chen , Jiang, Shan , Huang, Yu and Duan, Xiangfeng
Publisher
United States: National Academy of Sciences
Journal title
Language
English
Formats
Publication information
Publisher
United States: National Academy of Sciences
Subjects
More information
Scope and Contents
Contents
Graphene has attracted enormous attention for radio-frequency transistor applications because of its exceptional high carrier mobility, high carrier saturation velocity, and large critical current density. Herein we report a new approach for the scalable fabrication of high-performance graphene transistors with transferred gate stacks. Specifically...
Alternative Titles
Full title
High-frequency self-aligned graphene transistors with transferred gate stacks
Authors, Artists and Contributors
Identifiers
Primary Identifiers
Record Identifier
TN_cdi_pubmed_primary_22753503
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_pubmed_primary_22753503
Other Identifiers
ISSN
0027-8424,1091-6490
E-ISSN
1091-6490
DOI
10.1073/pnas.1205696109
