Impact of device scaling on the electrical properties of MoS 2 field-effect transistors
Impact of device scaling on the electrical properties of MoS 2 field-effect transistors
About this item
Full title
Impact of device scaling on the electrical properties of MoS 2 field-effect transistors
Author / Creator
Publisher
England
Journal title
Scientific reports, 2021-03, Vol.11 (1), p.6610
Language
English
Formats
Publication information
Publisher
England
More information
Scope and Contents
Contents
Two-dimensional semiconducting materials are considered as ideal candidates for ultimate device scaling. However, a systematic study on the performance and variability impact of scaling the different device dimensions is still lacking. Here we investigate the scaling behavior across 1300 devices fabricated on large-area grown MoS
material with c...
Alternative Titles
Full title
Impact of device scaling on the electrical properties of MoS 2 field-effect transistors
Authors, Artists and Contributors
Identifiers
Primary Identifiers
Record Identifier
TN_cdi_pubmed_primary_33758215
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_pubmed_primary_33758215
Other Identifiers
E-ISSN
2045-2322
DOI
10.1038/s41598-021-85968-y
