Improvement of DC Performance and RF Characteristics in GaN-Based HEMTs Using SiN x Stress-Engineeri...
Improvement of DC Performance and RF Characteristics in GaN-Based HEMTs Using SiN x Stress-Engineering Technique
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Author / Creator
Deng, Chenkai , Wang, Peiran , Tang, Chuying , Hu, Qiaoyu , Du, Fangzhou , Jiang, Yang , Zhang, Yi , Li, Mujun , Xiong, Zilong , Wang, Xiaohui , Wen, Kangyao , Li, Wenmao , Tao, Nick , Wang, Qing and Yu, Hongyu
Publisher
Switzerland
Journal title
Language
English
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Publication information
Publisher
Switzerland
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Scope and Contents
Contents
In this work, the DC performance and RF characteristics of GaN-based high-electron-mobility transistors (HEMTs) using the SiN
stress-engineered technique were systematically investigated. It was observed that a significant reduction in the peak electric field and an increase in the effective barrier thickness in the devices with compressive SiN<...
Alternative Titles
Full title
Improvement of DC Performance and RF Characteristics in GaN-Based HEMTs Using SiN x Stress-Engineering Technique
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Record Identifier
TN_cdi_pubmed_primary_39330629
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_pubmed_primary_39330629
Other Identifiers
ISSN
2079-4991
E-ISSN
2079-4991
DOI
10.3390/nano14181471
