Ab initio calculation of valley splitting in monolayer δ-doped phosphorus in silicon
Ab initio calculation of valley splitting in monolayer δ-doped phosphorus in silicon
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Publisher
New York: Springer New York
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Language
English
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New York: Springer New York
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Contents
The differences in energy between electronic bands due to valley splitting are of paramount importance in interpreting transport spectroscopy experiments on state-of-the-art quantum devices defined by scanning tunnelling microscope lithography. Using
vasp
, we develop a plane-wave density functional theory description of systems which is size...
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Full title
Ab initio calculation of valley splitting in monolayer δ-doped phosphorus in silicon
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TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_3606473
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_3606473
Other Identifiers
ISSN
1931-7573,1556-276X
E-ISSN
1556-276X
DOI
10.1186/1556-276X-8-111
