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Heterojunction Hybrid Devices from Vapor Phase Grown MoS2

Heterojunction Hybrid Devices from Vapor Phase Grown MoS2

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_4074969

Heterojunction Hybrid Devices from Vapor Phase Grown MoS2

About this item

Full title

Heterojunction Hybrid Devices from Vapor Phase Grown MoS2

Publisher

London: Nature Publishing Group UK

Journal title

Scientific reports, 2014-06, Vol.4 (1), p.5458, Article 5458

Language

English

Formats

Publication information

Publisher

London: Nature Publishing Group UK

More information

Scope and Contents

Contents

We investigate a vertically-stacked hybrid photodiode consisting of a thin n-type molybdenum disulfide (MoS
2
) layer transferred onto p-type silicon. The fabrication is scalable as the MoS
2
is grown by a controlled and tunable vapor phase sulfurization process. The obtained large-scale p-n heterojunction diodes exhibit notable photoco...

Alternative Titles

Full title

Heterojunction Hybrid Devices from Vapor Phase Grown MoS2

Identifiers

Primary Identifiers

Record Identifier

TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_4074969

Permalink

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_4074969

Other Identifiers

ISSN

2045-2322

E-ISSN

2045-2322

DOI

10.1038/srep05458

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