Graphene-based lateral heterostructure transistors exhibit better intrinsic performance than graphen...
Graphene-based lateral heterostructure transistors exhibit better intrinsic performance than graphene-based vertical transistors as post-CMOS devices
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Publisher
London: Nature Publishing Group UK
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Language
English
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London: Nature Publishing Group UK
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Scope and Contents
Contents
We investigate the intrinsic performance of vertical and lateral graphene-based heterostructure field-effect transistors, currently considered the most promising options to exploit graphene properties in post-CMOS electronics. We focus on three recently proposed graphene-based transistors, that in experiments have exhibited large current modulation...
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Full title
Graphene-based lateral heterostructure transistors exhibit better intrinsic performance than graphene-based vertical transistors as post-CMOS devices
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TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_4202216
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_4202216
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ISSN
2045-2322
E-ISSN
2045-2322
DOI
10.1038/srep06607
