Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics
Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics
About this item
Full title
Author / Creator
Cheng, Rui , Jiang, Shan , Chen, Yu , Liu, Yuan , Weiss, Nathan , Cheng, Hung-Chieh , Wu, Hao , Huang, Yu and Duan, Xiangfeng
Publisher
London: Nature Publishing Group UK
Journal title
Language
English
Formats
Publication information
Publisher
London: Nature Publishing Group UK
Subjects
More information
Scope and Contents
Contents
Two-dimensional layered materials, such as molybdenum disulfide, are emerging as an exciting material system for future electronics due to their unique electronic properties and atomically thin geometry. Here we report a systematic investigation of MoS
2
transistors with optimized contact and device geometry, to achieve self-aligned devices w...
Alternative Titles
Full title
Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics
Authors, Artists and Contributors
Identifiers
Primary Identifiers
Record Identifier
TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_4249646
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_4249646
Other Identifiers
ISSN
2041-1723
E-ISSN
2041-1723
DOI
10.1038/ncomms6143
