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Vertically Conductive Single-Crystal SiC-Based Bragg Reflector Grown on Si Wafer

Vertically Conductive Single-Crystal SiC-Based Bragg Reflector Grown on Si Wafer

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_4658498

Vertically Conductive Single-Crystal SiC-Based Bragg Reflector Grown on Si Wafer

About this item

Full title

Vertically Conductive Single-Crystal SiC-Based Bragg Reflector Grown on Si Wafer

Publisher

London: Nature Publishing Group UK

Journal title

Scientific reports, 2015-11, Vol.5 (1), p.17026-17026, Article 17026

Language

English

Formats

Publication information

Publisher

London: Nature Publishing Group UK

More information

Scope and Contents

Contents

Single-crystal silicon carbide (SiC) thin-films on silicon (Si) were used for the fabrication and characterization of electrically conductive distributed Bragg reflectors (DBRs) on 100 mm Si wafers. The DBRs, each composed of 3 alternating layers of SiC and Al(Ga)N grown on Si substrates, show high wafer uniformity with a typical maximum reflectanc...

Alternative Titles

Full title

Vertically Conductive Single-Crystal SiC-Based Bragg Reflector Grown on Si Wafer

Identifiers

Primary Identifiers

Record Identifier

TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_4658498

Permalink

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_4658498

Other Identifiers

ISSN

2045-2322

E-ISSN

2045-2322

DOI

10.1038/srep17026

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