The isotype ZnO/SiC heterojunction prepared by molecular beam epitaxy – A chemical inert interface w...
The isotype ZnO/SiC heterojunction prepared by molecular beam epitaxy – A chemical inert interface with significant band discontinuities
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Publisher
London: Nature Publishing Group UK
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Language
English
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London: Nature Publishing Group UK
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ZnO/SiC heterojunctions show great potential for various optoelectronic applications (e.g., ultraviolet light emitting diodes, photodetectors and solar cells). However, the lack of a detailed understanding of the ZnO/SiC interface prevents an efficient and rapid optimization of these devices. Here, intrinsic (but inherently n-type) ZnO were deposit...
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The isotype ZnO/SiC heterojunction prepared by molecular beam epitaxy – A chemical inert interface with significant band discontinuities
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TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_4791549
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_4791549
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ISSN
2045-2322
E-ISSN
2045-2322
DOI
10.1038/srep23106
