Few-layer Phosphorene: An Ideal 2D Material For Tunnel Transistors
Few-layer Phosphorene: An Ideal 2D Material For Tunnel Transistors
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Publisher
London: Nature Publishing Group UK
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Language
English
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Publisher
London: Nature Publishing Group UK
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Contents
2D transition metal dichalcogenides (TMDs) have attracted a lot of attention recently for energy-efficient tunneling-field-effect transistor (TFET) applications due to their excellent gate control resulting from their atomically thin dimensions. However, most TMDs have bandgaps (
E
g
) and effective masses (
m
*
) outside the opti...
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Full title
Few-layer Phosphorene: An Ideal 2D Material For Tunnel Transistors
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TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_4921921
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_4921921
Other Identifiers
ISSN
2045-2322
E-ISSN
2045-2322
DOI
10.1038/srep28515
