High Electron Mobility Thin‐Film Transistors Based on Solution‐Processed Semiconducting Metal Oxide...
High Electron Mobility Thin‐Film Transistors Based on Solution‐Processed Semiconducting Metal Oxide Heterojunctions and Quasi‐Superlattices
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Publisher
Germany: John Wiley & Sons, Inc
Journal title
Language
English
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Publisher
Germany: John Wiley & Sons, Inc
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Scope and Contents
Contents
High mobility thin‐film transistor technologies that can be implemented using simple and inexpensive fabrication methods are in great demand because of their applicability in a wide range of emerging optoelectronics. Here, a novel concept of thin‐film transistors is reported that exploits the enhanced electron transport properties of low‐dimensiona...
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Full title
High Electron Mobility Thin‐Film Transistors Based on Solution‐Processed Semiconducting Metal Oxide Heterojunctions and Quasi‐Superlattices
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Record Identifier
TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_5016782
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_5016782
Other Identifiers
ISSN
2198-3844
E-ISSN
2198-3844
DOI
10.1002/advs.201500058
