Study of Direct-Contact HfO₂/Si Interfaces
Study of Direct-Contact HfO₂/Si Interfaces
About this item
Full title
Author / Creator
Publisher
Switzerland: MDPI AG
Journal title
Language
English
Formats
Publication information
Publisher
Switzerland: MDPI AG
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Scope and Contents
Contents
Controlling monolayer Si oxide at the HfO₂/Si interface is a challenging issue in scaling the equivalent oxide thickness of HfO₂/Si gate stack structures. A concept that the author proposes to control the Si oxide interface by using ultra-high vacuum electron-beam HfO₂ deposition is described in this review paper, which enables the so-called direct...
Alternative Titles
Full title
Study of Direct-Contact HfO₂/Si Interfaces
Authors, Artists and Contributors
Author / Creator
Identifiers
Primary Identifiers
Record Identifier
TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_5448921
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_5448921
Other Identifiers
ISSN
1996-1944
E-ISSN
1996-1944
DOI
10.3390/ma5030512
