Screw-Dislocation-Driven Growth Mode in Two Dimensional GaSe on GaAs(001) Substrates Grown by Molecu...
Screw-Dislocation-Driven Growth Mode in Two Dimensional GaSe on GaAs(001) Substrates Grown by Molecular Beam Epitaxy
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London: Nature Publishing Group UK
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English
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London: Nature Publishing Group UK
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Regardless of the dissimilarity in the crystal symmetry, the two-dimensional GaSe materials grown on GaAs(001) substrates by molecular beam epitaxy reveal a screw-dislocation-driven growth mechanism. The spiral-pyramidal structure of GaSe multi-layers was typically observed with the majority in
ε
-phase. Comprehensive investigations on temper...
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Full title
Screw-Dislocation-Driven Growth Mode in Two Dimensional GaSe on GaAs(001) Substrates Grown by Molecular Beam Epitaxy
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TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_6883029
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_6883029
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ISSN
2045-2322
E-ISSN
2045-2322
DOI
10.1038/s41598-019-54406-5
