Carrier Depletion near the Grain Boundary of a SiC Bicrystal
Carrier Depletion near the Grain Boundary of a SiC Bicrystal
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Publisher
London: Nature Publishing Group UK
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Language
English
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Publisher
London: Nature Publishing Group UK
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Contents
Silicon carbide (SiC) bicrystals were prepared by diffusion bonding, and their grain boundary was observed using scanning transmission electron microscopy. The n-type electrical conductivity of a SiC single crystal was confirmed by scanning nonlinear dielectric microscopy (SNDM). Dopant profiling of the sample by SNDM showed that the interface acte...
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Full title
Carrier Depletion near the Grain Boundary of a SiC Bicrystal
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TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_6884474
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_6884474
Other Identifiers
ISSN
2045-2322
E-ISSN
2045-2322
DOI
10.1038/s41598-019-54525-z
