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Interfacial ferroelectricity in marginally twisted 2D semiconductors

Interfacial ferroelectricity in marginally twisted 2D semiconductors

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_9018412

Interfacial ferroelectricity in marginally twisted 2D semiconductors

About this item

Full title

Interfacial ferroelectricity in marginally twisted 2D semiconductors

Publisher

London: Nature Publishing Group UK

Journal title

Nature nanotechnology, 2022-04, Vol.17 (4), p.390-395

Language

English

Formats

Publication information

Publisher

London: Nature Publishing Group UK

More information

Scope and Contents

Contents

Twisted heterostructures of two-dimensional crystals offer almost unlimited scope for the design of new metamaterials. Here we demonstrate a room temperature ferroelectric semiconductor that is assembled using mono- or few-layer MoS
2
. These van der Waals heterostructures feature broken inversion symmetry, which, together with the asymmetry...

Alternative Titles

Full title

Interfacial ferroelectricity in marginally twisted 2D semiconductors

Identifiers

Primary Identifiers

Record Identifier

TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_9018412

Permalink

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_9018412

Other Identifiers

ISSN

1748-3387

E-ISSN

1748-3395

DOI

10.1038/s41565-022-01072-w

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