Highly stretchable organic electrochemical transistors with strain-resistant performance
Highly stretchable organic electrochemical transistors with strain-resistant performance
About this item
Full title
Author / Creator
Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS) , Chen, Jianhua , Huang, Wei , Zheng, Ding , Xie, Zhaoqian , Zhuang, Xinming , Zhao, Dan , Chen, Yao , Su, Ning , Chen, Hongming , Pankow, Robert M. , Gao, Zhan , Yu, Junsheng , Guo, Xugang , Cheng, Yuhua , Strzalka, Joseph , Yu, Xinge , Marks, Tobin J. and Facchetti, Antonio
Publisher
London: Nature Publishing Group UK
Journal title
Language
English
Formats
Publication information
Publisher
London: Nature Publishing Group UK
Subjects
More information
Scope and Contents
Contents
Realizing fully stretchable electronic materials is central to advancing new types of mechanically agile and skin-integrable optoelectronic device technologies. Here we demonstrate a materials design concept combining an organic semiconductor film with a honeycomb porous structure with biaxially prestretched platform that enables high-performance o...
Alternative Titles
Full title
Highly stretchable organic electrochemical transistors with strain-resistant performance
Authors, Artists and Contributors
Author / Creator
Chen, Jianhua
Huang, Wei
Zheng, Ding
Xie, Zhaoqian
Zhuang, Xinming
Zhao, Dan
Chen, Yao
Su, Ning
Chen, Hongming
Pankow, Robert M.
Gao, Zhan
Yu, Junsheng
Guo, Xugang
Cheng, Yuhua
Strzalka, Joseph
Yu, Xinge
Marks, Tobin J.
Facchetti, Antonio
Identifiers
Primary Identifiers
Record Identifier
TN_cdi_swepub_primary_oai_DiVA_org_liu_185004
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_swepub_primary_oai_DiVA_org_liu_185004
Other Identifiers
ISSN
1476-1122,1476-4660
E-ISSN
1476-4660
DOI
10.1038/s41563-022-01239-9
