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ArticlesPeer ReviewedFull Text
The emergence and prospects of deep-ultraviolet light-emitting diode technologies
Author / Creator:Kneissl, Michael ; Seong, Tae-Yeon ; Han, Jung ; Amano, Hiroshi
Publisher:London: Nature Publishing Group UK
Journal title:Nature photonics, 2019-04, Vol.13 (4), p.233-244
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Improving the Performance of AlGaN/AlN Solar-blind Ultraviolet Phototransistors By Inserting an Undoped Interface Layer
Author / Creator:Wu, Mian ; Peng, Zhuoya ; Jiang, Hao
Publisher:Bristol: IOP Publishing
Journal title:Journal of physics. Conference series, 2025-05, Vol.3008 (1), p.12028
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Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si
Author / Creator:Sun, Yi ; Zhou, Kun ; Sun, Qian ; Liu, Jianping ; Feng, Meixin ; Li, Zengcheng ; Zhou, Yu ; Zhang, Liqun ; Li, Deyao ; Zhang, Shuming ; Ikeda, Masao ; Liu, Sheng ; Yang, Hui
Publisher:London: Nature Publishing Group UK
Journal title:Nature photonics, 2016-09, Vol.10 (9), p.595-599
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An Overview of Normally-Off GaN-Based High Electron Mobility Transistors
Author / Creator:Roccaforte, Fabrizio ; Greco, Giuseppe ; Fiorenza, Patrick ; Iucolano, Ferdinando
Publisher:Switzerland: MDPI AG
Journal title:Materials, 2019-05, Vol.12 (10), p.1599
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ArticlesPeer ReviewedFull Text
Ultralow-threshold electrically injected AlGaN nanowire ultraviolet lasers on Si operating at low temperature
Author / Creator:Li, K. H. ; Liu, X. ; Wang, Q. ; Zhao, S. ; Mi, Z.
Publisher:London: Nature Publishing Group UK
Journal title:Nature nanotechnology, 2015-02, Vol.10 (2), p.140-144
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Effect of gamma irradiation on GaN lateral Schottky barrier diodes
Author / Creator:Duan, Chao ; Wu, Zhaoxi ; Meng, Meng ; Zhao, Shenglei ; Wang, Xu ; Yu, Qingkui
Publisher:Bristol: IOP Publishing
Journal title:Journal of physics. Conference series, 2022-11, Vol.2370 (1), p.12014
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The modulation of characteristics in AlGaN/GaN High electron mobility transistors (HEMTs) using multiple field plate technology
Author / Creator:Tao, Yujian ; Sun, Weihao ; Zhong, Rong
Publisher:Bristol: IOP Publishing
Journal title:Journal of physics. Conference series, 2024-08, Vol.2819 (1), p.12014
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Stepped ohmic structure of AlGaN/GaN HEMT with lower off-state leakage current
Author / Creator:Li, Gen ; Wu, Yang ; Ma, Lingmei ; Lin, Haofeng ; Qian, Rong ; Wu, Liang
Publisher:Bristol: IOP Publishing
Journal title:Journal of physics. Conference series, 2024-07, Vol.2807 (1), p.12015
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ArticlesPeer ReviewedFull Text
GaN/NbN epitaxial semiconductor/superconductor heterostructures
Author / Creator:Yan, Rusen ; Khalsa, Guru ; Vishwanath, Suresh ; Han, Yimo ; Wright, John ; Rouvimov, Sergei ; Katzer, D. Scott ; Nepal, Neeraj ; Downey, Brian P. ; Muller, David A. ; Xing, Huili G. ; Meyer, David J. ; Jena, Debdeep
Publisher:London: Nature Publishing Group UK
Journal title:Nature (London), 2018-03, Vol.555 (7695), p.183-189
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Evaluation of p-GaN HEMTs degradation under high temperatures forward and reverse gate bias stress
Author / Creator:Jiang, Kun ; Deng, Jing ; Ni, Yiqiang ; Liu, Jun ; Liu, Xin ; He, Zhiyuan ; He, Liang
Publisher:Bristol: IOP Publishing
Journal title:Journal of physics. Conference series, 2023-11, Vol.2645 (1), p.12016
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ArticlesPeer ReviewedFull Text
Optoelectronic synapses with chemical-electric behaviors in gallium nitride semiconductors for biorealistic neuromorphic functionality
Author / Creator:Liu, Xin ; Wang, Danhao ; Chen, Wei ; Kang, Yang ; Fang, Shi ; Luo, Yuanmin ; Luo, Dongyang ; Yu, Huabin ; Zhang, Haochen ; Liang, Kun ; Fu, Lan ; Ooi, Boon S. ; Liu, Sheng ; Sun, Haiding
Publisher:London: Nature Publishing Group UK
Journal title:Nature communications, 2024-09, Vol.15 (1), p.7671-12, Article 7671
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ArticlesPeer ReviewedFull Text
Strain-controlled power devices as inspired by human reflex
Author / Creator:Zhang, Shuo ; Ma, Bei ; Zhou, Xingyu ; Hua, Qilin ; Gong, Jian ; Liu, Ting ; Cui, Xiao ; Zhu, Jiyuan ; Guo, Wenbin ; Jing, Liang ; Hu, Weiguo ; Wang, Zhong Lin
Publisher:London: Nature Publishing Group UK
Journal title:Nature communications, 2020-01, Vol.11 (1), p.326-326, Article 326
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ArticlesPeer ReviewedFull Text
Single-Particle Radiation Sensitivity of Ultrawide-Bandgap Semiconductors to Terrestrial Atmospheric Neutrons
Author / Creator:Munteanu, Daniela ; Autran, Jean-Luc
Publisher:Basel: MDPI AG
Journal title:Crystals (Basel), 2025-02, Vol.15 (2), p.186
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ArticlesPeer ReviewedFull Text
A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability
Author / Creator:Zeng, Fanming ; An, Judy Xilin ; Zhou, Guangnan ; Li, Wenmao ; Wang, Hui ; Duan, Tianli ; Jiang, Lingli ; Yu, Hongyu
Publisher:Basel: MDPI AG
Journal title:Electronics (Basel), 2018-12, Vol.7 (12), p.377
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ArticlesPeer ReviewedFull Text
k-space imaging of anisotropic 2D electron gas in GaN/GaAlN high-electron-mobility transistor heterostructures
Author / Creator:Lev, L. L. ; Maiboroda, I. O. ; Husanu, M.-A. ; Grichuk, E. S. ; Chumakov, N. K. ; Ezubchenko, I. S. ; Chernykh, I. A. ; Wang, X. ; Tobler, B. ; Schmitt, T. ; Zanaveskin, M. L. ; Valeyev, V. G. ; Strocov, V. N.
Publisher:London: Nature Publishing Group UK
Journal title:Nature communications, 2018-07, Vol.9 (1), p.2653-9, Article 2653
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ArticlesPeer ReviewedFull Text
Heterogeneously integrated flexible microwave amplifiers on a cellulose nanofibril substrate
Author / Creator:Zhang, Huilong ; Li, Jinghao ; Liu, Dong ; Min, Seunghwan ; Chang, Tzu-Hsuan ; Xiong, Kanglin ; Park, Sung Hyun ; Kim, Jisoo ; Jung, Yei Hwan ; Park, Jeongpil ; Lee, Juhwan ; Han, Jung ; Katehi, Linda ; Cai, Zhiyong ; Gong, Shaoqin ; Ma, Zhenqiang
Publisher:London: Nature Publishing Group UK
Journal title:Nature communications, 2020-06, Vol.11 (1), p.3118-3118, Article 3118
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ArticlesPeer ReviewedFull Text
Study of Thin Barrier GaN Biosensor with Improved Sensitivity
Author / Creator:Zhang, Peng ; Liu, Can ; Zhang, Jihua
Publisher:Bristol: IOP Publishing
Journal title:Journal of physics. Conference series, 2023-05, Vol.2500 (1), p.12001
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ArticlesPeer ReviewedFull Text
Fabrication of AlGaN High Frequency Bulk Acoustic Resonator by Reactive RF Magnetron Co-sputtering System
Author / Creator:Chang, Yu-Chen ; Chen, Ying-Chung ; Cheng, Chien-Chuan
Publisher:Basel: MDPI AG
Journal title:Materials, 2021-12, Vol.14 (23), p.7377
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ArticlesPeer ReviewedFull Text
Investigation of AlGaN/GaN HEMT trap barrier height variation under mechanical stress and voltage stress
Author / Creator:Zhang, Yiqun ; Zhu, Hui ; Liu, Xing ; Zhang, Zhirang
Publisher:Bristol: IOP Publishing
Journal title:Journal of physics. Conference series, 2024-07, Vol.2810 (1), p.12006
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Integrating 2D layered materials with 3D bulk materials as van der Waals heterostructures for photodetections: Current status and perspectives
Author / Creator:Liu, Weijie ; Yu, Yiye ; Peng, Meng ; Zheng, Zhihua ; Jian, Pengcheng ; Wang, Yang ; Zou, Yuanchen ; Zhao, Yongming ; Wang, Fang ; Wu, Feng ; Chen, Changqing ; Dai, Jiangnan ; Wang, Peng ; Hu, Weida
Publisher:Beijing: John Wiley & Sons, Inc
Journal title:InfoMat, 2023-10, Vol.5 (10), p.n/a
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Showing 1 to 20 of 1,311 results

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The emergence and prospects of deep-ultraviolet light-emitting diode technologies

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Improving the Performance of AlGaN/AlN Solar-blind Ultraviolet Phototransistors By Inserting an Undoped Interface Layer

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Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si

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An Overview of Normally-Off GaN-Based High Electron Mobility Transistors

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Ultralow-threshold electrically injected AlGaN nanowire ultraviolet lasers on Si operating at low temperature

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Effect of gamma irradiation on GaN lateral Schottky barrier diodes

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The modulation of characteristics in AlGaN/GaN High electron mobility transistors (HEMTs) using multiple field plate technology

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Stepped ohmic structure of AlGaN/GaN HEMT with lower off-state leakage current

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GaN/NbN epitaxial semiconductor/superconductor heterostructures

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Evaluation of p-GaN HEMTs degradation under high temperatures forward and reverse gate bias stress

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Optoelectronic synapses with chemical-electric behaviors in gallium nitride semiconductors for biorealistic neuromorphic functionality

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Strain-controlled power devices as inspired by human reflex

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Single-Particle Radiation Sensitivity of Ultrawide-Bandgap Semiconductors to Terrestrial Atmospheric Neutrons

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A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability

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k-space imaging of anisotropic 2D electron gas in GaN/GaAlN high-electron-mobility transistor heterostructures

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Heterogeneously integrated flexible microwave amplifiers on a cellulose nanofibril substrate

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Study of Thin Barrier GaN Biosensor with Improved Sensitivity

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Fabrication of AlGaN High Frequency Bulk Acoustic Resonator by Reactive RF Magnetron Co-sputtering System

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Investigation of AlGaN/GaN HEMT trap barrier height variation under mechanical stress and voltage stress

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Integrating 2D layered materials with 3D bulk materials as van der Waals heterostructures for photodetections: Current status and perspectives

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