Design of GAA Nanosheet Ferroelectric Area Tunneling FET and Its Significance with DC/RF Characteris...
Design of GAA Nanosheet Ferroelectric Area Tunneling FET and Its Significance with DC/RF Characteristics Including Linearity Analyses
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Publisher
New York: Springer US
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Language
English
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New York: Springer US
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This work reports an emerging structure of gate-all-around ferroelectric area tunneling field-effect transistor (FATFET) by considering ferroelectric and a
n
-epitaxial layer enveloped around the overlapped region of the source and channel to succeed with complete area of tunneling probability. To accomplish this, ferroelectric (
Hf
0.5...
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Full title
Design of GAA Nanosheet Ferroelectric Area Tunneling FET and Its Significance with DC/RF Characteristics Including Linearity Analyses
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TN_cdi_doaj_primary_oai_doaj_org_article_8e61ed8fffd641778650590846695033
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_8e61ed8fffd641778650590846695033
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ISSN
1931-7573,1556-276X
E-ISSN
1556-276X
DOI
10.1186/s11671-022-03690-8
