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Books
The materials science of microelectronics / Klaus J. Bachmann.
Author / Creator:Bachmann, Klaus J.
Publisher:New York, N.Y. : VCH, c1995.
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Books
Microscopy of semiconducting materials 1991 : proceedings of the Institute of Physics conference held at Oxford University, 25-28 March 1991 / edited by A.G. Cullis and N.J. Long.
Publisher:Bristol ; New York : Institute of Physics, 1991.
Date:1991.
Call Numbers:N620.112972/1
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Books
Liquid phase epitaxial of gallium arsenide - a review / by D. Alexiev ... [et al.].
Author / Creator:Alexiev, D.
Publisher:Menai, N.S.W. : Australian Nuclear Science and Technology Organisation, Lucas Heights Research Laboratories, [1992]
Date:[1992]
Call Numbers:NQ539.7606/1
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Books
Ionized-cluster beam deposition and epitaxy / by Toshinori Takagi.
Author / Creator:Takagi, Toshinori.
Publisher:Park Ridge, N.J., U.S.A. : Noyes Publications, c1988.
Call Numbers:N621.3817/30
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Books
Fundamentals of silicon integrated device technology / edited by Robert Mercer Burger and R. P. Donovan.
Author / Creator:Burger, R. M. (Robert M.), 1927-
Publisher:Englewood Cliffs, N.J. : Prentice-Hall, 1967-1968.
Date:1967-1968.
Call Numbers:T0288939 , T0288938
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ArticlesPeer ReviewedFull Text
Design of GAA Nanosheet Ferroelectric Area Tunneling FET and Its Significance with DC/RF Characteristics Including Linearity Analyses
Author / Creator:Thoti, Narasimhulu ; Li, Yiming
Publisher:New York: Springer US
Journal title:Nanoscale research letters, 2022-05, Vol.17 (1), p.53-53, Article 53
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Newsletter articlesFull Text
Patent Issued for Method for Forming through Silicon via in N+ Epitaxy Wafers with Reduced Parasitic Capacitance
Publisher:NewsRX LLC
Journal title:Chemicals & Chemistry, 2017, p.5039
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Newsletter articlesFull Text
Patent Issued for Thin Channel-On-Insulator MOSFET Device with N+ Epitaxy Substrate and Embedded Stressor
Publisher:NewsRX LLC
Journal title:Chemicals & Chemistry, 2016, p.5221
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Newsletter articlesFull Text
Infineon Technologies Austria AG; Patent Issued for Method and Substrate for Thick III-N Epitaxy
Publisher:Atlanta: NewsRx
Journal title:Journal of Engineering, 2015, p.7121
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Newsletter articlesFull Text
Patent Issued for Method and Substrate for Thick III-N Epitaxy
Publisher:NewsRX LLC
Journal title:Journal of Engineering, 2015, p.7121
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Newsletter articlesFull Text
"Method and Substrate for Thick III-N Epitaxy" in Patent Application Approval Process
Publisher:NewsRX LLC
Journal title:Politics & Government Week, 2014, p.1966
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Newsletter articlesFull Text
"Method and Substrate for Thick III-N Epitaxy" in Patent Application Approval Process
Publisher:NewsRX LLC
Journal title:Electronics Newsweekly, 2014, p.798
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Newsletter articlesFull Text
Patents; "Method and Substrate for Thick III-N Epitaxy" in Patent Application Approval Process
Publisher:Atlanta: NewsRx
Journal title:Electronics Newsweekly, 2014, p.1966
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Newsletter articlesFull Text
Patents; Researchers Submit Patent Application, "Through Silicon via in N+ Epitaxy Wafers with Reduced Parasitic Capacitance", for Approval
Publisher:Atlanta: NewsRx
Journal title:Journal of Engineering, 2015, p.6710
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Newsletter articlesFull Text
Researchers Submit Patent Application, "Through Silicon via in N+ Epitaxy Wafers with Reduced Parasitic Capacitance", for Approval
Publisher:NewsRX LLC
Journal title:Journal of Engineering, 2015, p.6710
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Newsletter articlesFull Text
Patents; "Thin Channel-On-Insulator Mosfet Device with N+epitaxy Substrate and Embedded Stressor" in Patent Application Approval Process (USPTO 20150270395)
Publisher:Atlanta: NewsRx
Journal title:Chemicals & Chemistry, 2015, p.3002
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Newsletter articlesFull Text
International Business Machines Corporation; Agency Reviews Patent Application Approval Request for "Through Silicon via in N+ Epitaxy Wafers with Reduced Parasitic Capacitance"
Publisher:Atlanta: NewsRx
Journal title:Journal of Engineering, 2013, p.1777
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Newsletter articlesFull Text
WIPO PUBLISHES PATENT OF INTEL, SANAZ K. GARDNER, BENJAMIN CHU-KUNG, MARKO RADOSAVLJEVIC, ROBERT S. CHAU, SEUNG HOON SUNG, HAN WUI THEN AND SANSAPTAK DASGUPTA FOR "NANOSTRUCTURES AND NANOFEATURES WITH...
Publisher:Washington, D.C: HT Digital Streams Limited
Journal title:US Fed News Service, Including US State News, 2015
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Journals
Journal of vacuum science & technology. B, Microelectronics processing and phenomena : an official journal of the American Vacuum Society.
Publisher:New York, N.Y. : Published for the Society by the American Institute of Physics, 1983-c1990.
Date:1983-c1990.
Call Numbers:NQ533.506/4
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ArticlesFull Text
Designing low-cost TaC virtual substrates for \(Al_xGa_{1-x}N\) epitaxy
Author / Creator:Roberts, Dennice M ; Norman, Andrew ; Miller, Moira K ; M Brooks Tellekamp
Publisher:Ithaca: Cornell University Library, arXiv.org
Journal title:arXiv.org, 2022-08
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The materials science of microelectronics / Klaus J. Bachmann.

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Microscopy of semiconducting materials 1991 : proceedings of the Institute of Physics conference held at Oxford University, 25-28 March 1991 / edited by A.G. Cullis and N.J. Long.

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Liquid phase epitaxial of gallium arsenide - a review / by D. Alexiev ... [et al.].

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Ionized-cluster beam deposition and epitaxy / by Toshinori Takagi.

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Fundamentals of silicon integrated device technology / edited by Robert Mercer Burger and R. P. Donovan.

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Design of GAA Nanosheet Ferroelectric Area Tunneling FET and Its Significance with DC/RF Characteristics Including Linearity Analyses

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Patent Issued for Method for Forming through Silicon via in N+ Epitaxy Wafers with Reduced Parasitic Capacitance

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Patent Issued for Thin Channel-On-Insulator MOSFET Device with N+ Epitaxy Substrate and Embedded Stressor

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Infineon Technologies Austria AG; Patent Issued for Method and Substrate for Thick III-N Epitaxy

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Patent Issued for Method and Substrate for Thick III-N Epitaxy

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"Method and Substrate for Thick III-N Epitaxy" in Patent Application Approval Process

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"Method and Substrate for Thick III-N Epitaxy" in Patent Application Approval Process

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Patents; "Method and Substrate for Thick III-N Epitaxy" in Patent Application Approval Process

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Patents; Researchers Submit Patent Application, "Through Silicon via in N+ Epitaxy Wafers with Reduced Parasitic Capacitance", for Approval

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Researchers Submit Patent Application, "Through Silicon via in N+ Epitaxy Wafers with Reduced Parasitic Capacitance", for Approval

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Patents; "Thin Channel-On-Insulator Mosfet Device with N+epitaxy Substrate and Embedded Stressor" in Patent Application Approval Process (USPTO 20150270395)

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International Business Machines Corporation; Agency Reviews Patent Application Approval Request for "Through Silicon via in N+ Epitaxy Wafers with Reduced Parasitic Capacitance"

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WIPO PUBLISHES PATENT OF INTEL, SANAZ K. GARDNER, BENJAMIN CHU-KUNG, MARKO RADOSAVLJEVIC, ROBERT S. CHAU, SEUNG HOON SUNG, HAN WUI THEN AND SANSAPTAK DASGUPTA FOR "NANOSTRUCTURES AND NANOFEATURES WITH...

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Journal of vacuum science & technology. B, Microelectronics processing and phenomena : an official journal of the American Vacuum Society.

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Designing low-cost TaC virtual substrates for \(Al_xGa_{1-x}N\) epitaxy

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