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634 results for resistive+random+access+memory+(RRAM)

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Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications
Author / Creator:Zahoor, Furqan ; Azni Zulkifli, Tun Zainal ; Khanday, Farooq Ahmad
Publisher:New York: Springer US
Journal title:Nanoscale research letters, 2020-04, Vol.15 (1), p.90-90, Article 90
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Advancements in oxide-based resistive random-access memory (rram): A modern perspective on resistive switching mechanisms and conduction models
Author / Creator:Liang, Zheng
Journal title:I-Manager's Journal on Circuits & Systems, 2024, Vol.12 (2), p.10
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A semiconducting supramolecular Co(II)-metallogel based resistive random access memory (RRAM) design with good endurance capabilities
Author / Creator:Roy, Arpita ; Dhibar, Subhendu ; Kumar, Saurav ; Karmakar, Kripasindhu ; Garg, Parul ; Ruidas, Pradip ; Bhattacharjee, Subham ; Bera, Ashok ; Saha, Bidyut ; Ray, Soumya Jyoti
Publisher:London: Nature Publishing Group UK
Journal title:Scientific reports, 2024-11, Vol.14 (1), p.26848-15, Article 26848
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Carbon Nanotube Field Effect Transistor (CNTFET) and Resistive Random Access Memory (RRAM) Based Ternary Combinational Logic Circuits
Author / Creator:Zahoor, Furqan ; Hussin, Fawnizu Azmadi ; Khanday, Farooq Ahmad ; Ahmad, Mohamad Radzi ; Mohd Nawi, Illani ; Ooi, Chia Yee ; Rokhani, Fakhrul Zaman
Publisher:Basel: MDPI AG
Journal title:Electronics (Basel), 2021-01, Vol.10 (1), p.79
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ZnO and ZnO-Based Materials as Active Layer in Resistive Random-Access Memory (RRAM)
Author / Creator:Nowak, Ewelina ; Chłopocka, Edyta ; Szybowicz, Mirosław
Publisher:Basel: MDPI AG
Journal title:Crystals (Basel), 2023-02, Vol.13 (3), p.416
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Ternary Arithmetic Logic Unit Design Utilizing Carbon Nanotube Field Effect Transistor (CNTFET) and Resistive Random Access Memory (RRAM)
Author / Creator:Zahoor, Furqan ; Hussin, Fawnizu Azmadi ; Khanday, Farooq Ahmad ; Ahmad, Mohamad Radzi ; Mohd Nawi, Illani
Publisher:Basel: MDPI AG
Journal title:Micromachines (Basel), 2021-10, Vol.12 (11), p.1288
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Fully coupled electrothermal simulation of resistive random access memory (RRAM) array
Author / Creator:Wang, Da-Wei ; Zhao, Wen-Sheng ; Chen, Wenchao ; Xie, Hao ; Yin, Wen-Yan
Publisher:Beijing: Science China Press
Journal title:Science China. Information sciences, 2020-08, Vol.63 (8), p.189401, Article 189401
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Periodic Analysis of Resistive Random Access Memory (RRAM)-Based Swish Activation Function
Author / Creator:Fatima, Afroz ; Pethe, Abhijit
Publisher:Singapore: Springer Nature Singapore
Journal title:SN computer science, 2022-05, Vol.3 (3), p.202, Article 202
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Modeling of Self-Aligned Selector Based on Ultra-Thin Metal Oxide for Resistive Random-Access Memory (RRAM) Crossbar Arrays
Author / Creator:Fedotov, Mikhail ; Korotitsky, Viktor ; Koveshnikov, Sergei
Publisher:Switzerland: MDPI AG
Journal title:Nanomaterials (Basel, Switzerland), 2024-04, Vol.14 (8), p.668
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A compute-in-memory chip based on resistive random-access memory
Author / Creator:Wan, Weier ; Kubendran, Rajkumar ; Schaefer, Clemens ; Eryilmaz, Sukru Burc ; Zhang, Wenqiang ; Wu, Dabin ; Deiss, Stephen ; Raina, Priyanka ; Qian, He ; Gao, Bin ; Joshi, Siddharth ; Wu, Huaqiang ; Wong, H.-S. Philip ; Cauwenberghs, Gert
Publisher:London: Nature Publishing Group UK
Journal title:Nature (London), 2022-08, Vol.608 (7923), p.504-512
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Conductance Quantization in Resistive Random Access Memory
Publisher:Heidelberg: Springer Nature B.V
Journal title:Nanoscale research letters, 2015-12, Vol.10 (1), p.420
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Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing
Author / Creator:Furqan Zahoor ; Fawnizu Azmadi Hussin ; Usman Bature Isyaku ; Shagun Gupta ; Farooq Ahmad Khanday ; Anupam Chattopadhyay ; Haider Abbas
Publisher:Heidelberg: Springer Nature B.V
Journal title:Nanoscale research letters, 2023-03, Vol.18 (1), p.36-49
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A Unified Current-Voltage Model for Metal Oxide-Based Resistive Random-Access Memory
Author / Creator:Chung, Harry ; Shin, Hyungsoon ; Park, Jisun ; Sun, Wookyung
Publisher:Switzerland: MDPI AG
Journal title:Materials, 2022-12, Vol.16 (1), p.182
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The Switching Characteristics in Bilayer ZnO/HfO2 Resistive Random-Access Memory, Depending on the Top Electrode
Author / Creator:Kwon, So-Yeon ; Ko, Woon-San ; Byun, Jun-Ho ; Lee, Do-Yeon ; Lee, Hi-Deok ; Lee, Ga-Won
Publisher:Mainz: MDPI AG
Journal title:Electronic materials (Basel), 2024-06, Vol.5 (2), p.71-79
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A Plasmonic Optoelectronic Resistive Random‐Access Memory for In‐Sensor Color Image Cryptography
Author / Creator:Yang, Quan ; Kang, Yu ; Zhang, Cheng ; Chen, Haohan ; Zhang, Tianjiao ; Bian, Zheng ; Su, Xiangwei ; Xu, Wei ; Sun, Jiabao ; Wang, Pan ; Xu, Yang ; Yu, Bin ; Zhao, Yuda
Publisher:Germany: John Wiley & Sons, Inc
Journal title:Advanced science, 2024-08, Vol.11 (29), p.e2403043-n/a
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ArticlesPeer ReviewedFull Text
Investigating the Temperature Effects on ZnO, TiO2, WO3 and HfO2 Based Resistive Random Access Memory (RRAM) Devices
Author / Creator:Dongale, T D ; Khot, K V ; Mohite, S V ; Khandagale, S S ; Shinde, S S ; Patil, V L ; Vanalkar, S A ; Moholkar, A V ; Rajpure, K Y ; Bhosale, P N ; Patil, P S ; Gaikwad, P K ; Kamat, R K
Publisher:Sumy Ukraine: Sumy State University, Journal of Nano - and Electronic Physics
Journal title:Journal of Nano- and Electronic Physics, 2016-10, Vol.8 (4), p.4030-1
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Analysis of Leakage Current of HfO2/TaOx-Based 3-D Vertical Resistive Random Access Memory Array
Author / Creator:Chen, Zhisheng ; Song, Renjun ; Huo, Qiang ; Ren, Qirui ; Zhang, Chenrui ; Li, Linan ; Zhang, Feng
Publisher:Basel: MDPI AG
Journal title:Micromachines (Basel), 2021-05, Vol.12 (6), p.614
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Graphene-based RRAM devices for neural computing
Author / Creator:R, Rajalekshmi T. ; Das, Rinku Rani ; Reghuvaran, Chithra ; James, Alex
Publisher:Lausanne: Frontiers Research Foundation
Journal title:Frontiers in neuroscience, 2023-10, Vol.17, p.1253075-1253075
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Low-Power Resistive Switching Characteristic in HfO2/TiOx Bi-Layer Resistive Random-Access Memory
Author / Creator:Ding, Xiangxiang ; Feng, Yulin ; Huang, Peng ; Liu, Lifeng ; Kang, Jinfeng
Publisher:New York: Springer US
Journal title:Nanoscale research letters, 2019-05, Vol.14 (1), p.157-7, Article 157
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Optimal Weight‐Splitting in Resistive Random Access Memory‐Based Computing‐in‐Memory Macros
Author / Creator:Song, Choongseok ; Kim, Jeeson ; Jeong, Doo Seok
Publisher:Weinheim: John Wiley & Sons, Inc
Journal title:Advanced intelligent systems, 2023-01, Vol.5 (1), p.n/a
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Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications

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Advancements in oxide-based resistive random-access memory (rram): A modern perspective on resistive switching mechanisms and conduction models

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A semiconducting supramolecular Co(II)-metallogel based resistive random access memory (RRAM) design with good endurance capabilities

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Carbon Nanotube Field Effect Transistor (CNTFET) and Resistive Random Access Memory (RRAM) Based Ternary Combinational Logic Circuits

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ZnO and ZnO-Based Materials as Active Layer in Resistive Random-Access Memory (RRAM)

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Ternary Arithmetic Logic Unit Design Utilizing Carbon Nanotube Field Effect Transistor (CNTFET) and Resistive Random Access Memory (RRAM)

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Fully coupled electrothermal simulation of resistive random access memory (RRAM) array

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Periodic Analysis of Resistive Random Access Memory (RRAM)-Based Swish Activation Function

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Modeling of Self-Aligned Selector Based on Ultra-Thin Metal Oxide for Resistive Random-Access Memory (RRAM) Crossbar Arrays

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A compute-in-memory chip based on resistive random-access memory

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Conductance Quantization in Resistive Random Access Memory

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Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing

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A Unified Current-Voltage Model for Metal Oxide-Based Resistive Random-Access Memory

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The Switching Characteristics in Bilayer ZnO/HfO2 Resistive Random-Access Memory, Depending on the Top Electrode

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A Plasmonic Optoelectronic Resistive Random‐Access Memory for In‐Sensor Color Image Cryptography

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Investigating the Temperature Effects on ZnO, TiO2, WO3 and HfO2 Based Resistive Random Access Memory (RRAM) Devices

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Analysis of Leakage Current of HfO2/TaOx-Based 3-D Vertical Resistive Random Access Memory Array

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Graphene-based RRAM devices for neural computing

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Low-Power Resistive Switching Characteristic in HfO2/TiOx Bi-Layer Resistive Random-Access Memory

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Optimal Weight‐Splitting in Resistive Random Access Memory‐Based Computing‐in‐Memory Macros

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