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ArticlesPeer ReviewedFull Text
DC and RF characteristics of In0.52Al0.48As/In0.7Ga0.3As HEMTs at 300 and 16 K
Author / Creator:Endoh, A. ; Watanabe, I. ; Mimura, T. ; Matsui, T.
Publisher:Stevenage: The Institution of Engineering and Technology
Journal title:Electronics letters, 2013-01, Vol.49 (3), p.217-219
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ArticlesPeer ReviewedFull Text
Improvement of DC Performance and RF Characteristics in GaN-Based HEMTs Using SiN x Stress-Engineering Technique
Author / Creator:Deng, Chenkai ; Wang, Peiran ; Tang, Chuying ; Hu, Qiaoyu ; Du, Fangzhou ; Jiang, Yang ; Zhang, Yi ; Li, Mujun ; Xiong, Zilong ; Wang, Xiaohui ; Wen, Kangyao ; Li, Wenmao ; Tao, Nick ; Wang, Qing ; Yu, Hongyu
Publisher:Switzerland
Journal title:Nanomaterials (Basel, Switzerland), 2024-09, Vol.14 (18)
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ArticlesPeer ReviewedFull Text
Improvement of DC Performance and RF Characteristics in GaN-Based HEMTs Using SiN[sub.x] Stress-Engineering Technique
Author / Creator:Deng, Chenkai ; Wang, Peiran ; Tang, Chuying ; Hu, Qiaoyu ; Du, Fangzhou ; Jiang, Yang ; Zhang, Yi ; Li, Mujun ; Xiong, Zilong ; Wang, Xiaohui ; Wen, Kangyao ; Li, Wenmao ; Tao, Nick ; Wang, Qing ; Yu, Hongyu
Publisher:MDPI AG
Journal title:Nanomaterials (Basel, Switzerland), 2024-09, Vol.14 (18)
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ArticlesPeer ReviewedFull Text
Analysis for DC and RF Characteristics Recessed-Gate GaN MOSFET Using Stacked TiO 2 /Si 3 N 4 Dual-Layer Insulator
Author / Creator:Min, So-Ra ; Cho, Min-Su ; Lee, Sang-Ho ; Park, Jin ; An, Hee-Dae ; Kim, Geon-Uk ; Yoon, Young-Jun ; Seo, Jae-Hwa ; Jang, Jae-Won ; Bae, Jin-Hyuk ; Lee, Sin-Hyung ; Kang, In-Man
Publisher:Switzerland
Journal title:Materials, 2022-01, Vol.15 (3)
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ArticlesPeer ReviewedFull Text
Analog/RF characteristics of a 3D-Cyl underlap GAA-TFET based on a Ge source using fringing-field engineering for low-power applications
Author / Creator:Beohar, Ankur ; Yadav, Nandakishor ; Shah, Ambika Prasad ; Vishvakarma, Santosh Kumar
Publisher:New York: Springer US
Journal title:Journal of computational electronics, 2018-12, Vol.17 (4), p.1650-1657
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ArticlesFull Text
DC and RF characteristics of 20 nm gate length InAlAs/InGaAs/InP HEMTs for high frequency application
Author / Creator:Boursali, Amin ; Guen-Bouazza, Ahlam ; Sayah, Choukria
Journal title:International journal of electrical and computer engineering (Malacca, Malacca), 2020-04, Vol.10 (2), p.1248
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ArticlesPeer ReviewedFull Text
Effect of source-drain spacing on DC and RF characteristics of 45 nm-gate AlGaN/GaN MIS-HEMTs
Author / Creator:Yamashita, Y. ; Watanabe, I. ; Endoh, A. ; Hirose, N. ; Mimura, T. ; Matsui, T.
Journal title:Electronics letters, 2011-02, Vol.47 (3), p.211-212
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ArticlesPeer ReviewedFull Text
DC and RF characteristics of In 0.52 Al 0.48 As/In 0.7 Ga 0.3 As HEMTs at 300 and 16 K
Author / Creator:Endoh, A. ; Watanabe, I. ; Mimura, T. ; Matsui, T.
Journal title:Electronics letters, 2013-01, Vol.49 (3), p.217-219
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ArticlesFull Text
RF characteristics of 0.13-μm NMOS transistors for millimeter-wave application
Author / Creator:Maisurah Mohd Hassan, Siti ; M. Yusof, Yusman ; Marzuki, Arjuna ; Emran Farid, Nazif ; Amalina Enche Ab Rahim, Siti ; Hafis M. Ali, Mohd
Publisher:Emerald Group Publishing Limited
Journal title:Microelectronics international, 2014-01, Vol.31 (2), p.116-120
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ArticlesPeer ReviewedFull Text
DC and RF characteristics of In^sub 0.52^Al^sub 0.48^As/In^sub 0.7^Ga^sub 0.3^As HEMTs at 300 and 16 K
Author / Creator:Endoh, A ; Watanabe, I ; Mimura, T ; Matsui, T
Publisher:Stevenage: John Wiley & Sons, Inc
Journal title:Electronics letters, 2013-01, Vol.49 (3), p.1
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ArticlesPeer ReviewedFull Text
DC and RF characteristics of In sub( 0.52)Al sub( 0.48)As/In sub( 0.7)Ga sub( 0.3)As HEMTs at 300 and 16 K
Author / Creator:Endoh, A ; Watanabe, I ; Mimura, T ; Matsui, T
Journal title:Electronics letters, 2013-01, Vol.49 (3), p.1-1
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ArticlesFull Text
RF characteristics of 0.13-[micro]m NMOS transistors for millimeter-wave application
Author / Creator:Siti Maisurah Mohd Hassan ; Yusof, Yusman M ; Marzuki, Arjuna ; Nazif, Emran Farid ; Siti Amalina Enche Ab Rahim ; Ali, Mohd Hafis M
Publisher:Bradford: Emerald Group Publishing Limited
Journal title:Microelectronics international, 2014-05, Vol.31 (2), p.116
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ArticlesPeer ReviewedFull Text
Effect of source-drain spacing on DC and RF characteristics of 45 nm-gate AlGaN/GaN MIS-HEMTs
Author / Creator:Yamashita, Y ; Watanabe, I ; Endoh, A ; Hirose, N ; Mimura, T ; Matsui, T
Publisher:Stevenage: John Wiley & Sons, Inc
Journal title:Electronics letters, 2011-02, Vol.47 (3), p.1-1
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ArticlesPeer ReviewedFull Text
Effect of source-drain spacing on DC and RF characteristics of 45 nm-gate AIGaN/GaN MIS-HEMTs
Author / Creator:YAMASHITA, Y ; WATANABE, I ; ENDOH, A ; HIROSE, N ; MIMURA, T ; MATSUI, T
Publisher:Stevenage: Institution of Engineering and Technology
Journal title:Electronics letters, 2011, Vol.47 (3), p.211-212
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ArticlesPeer ReviewedFull Text
A Basic Study on RF Characteristics of Meander Line Employing Periodic Ground Structure on GaAs MMIC for Application to Miniaturization of RF Components
Author / Creator:Jeong, Jang-Hyeon ; Kang, Suk-Youb ; Yun, Young
Publisher:Cairo, Egypt: Hindawi Publishing Corporation
Journal title:International journal of antennas and propagation, 2014-01, Vol.2014 (2014), p.1-6
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ArticlesPeer ReviewedFull Text
Improvements of AlN/GaN MISFET DC and RF characteristics with in situ deposited Si^sub 3^N^sub 4
Author / Creator:Seo, S ; Cho, E ; Pavlidis, D
Publisher:Stevenage: John Wiley & Sons, Inc
Journal title:Electronics letters, 2008-11, Vol.44 (24), p.1
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ArticlesPeer ReviewedFull Text
Improvements of AlN/GaN MISFET DC and RF characteristics with in situ deposited Si sub( 3)N sub( 4)
Author / Creator:Seo, S ; Cho, E ; Pavlidis, D
Journal title:Electronics letters, 2008-11, Vol.44 (24), p.1-1
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ArticlesPeer ReviewedFull Text
Improvements of AIN/GaN MISFET DC and RF characteristics with in situ deposited Si3N4
Author / Creator:SEO, S ; CHO, E ; PAVLIDIS, D
Publisher:Stevenage: Institution of Engineering and Technology
Journal title:Electronics letters, 2008, Vol.44 (24), p.1428-1429
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ArticlesPeer ReviewedFull Text
Improvements of AlN/GaN MISFET DC and RF characteristics with in situ deposited Si 3 N 4
Author / Creator:Seo, S. ; Cho, E. ; Pavlidis, D.
Journal title:Electronics letters, 2008-11, Vol.44 (24), p.1428-1429
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ArticlesPeer ReviewedFull Text
Recent Advances in Flexible RF MEMS
Author / Creator:Shi, Yingli ; Shen, Zhigang
Publisher:Basel: MDPI AG
Journal title:Micromachines (Basel), 2022-07, Vol.13 (7), p.1088
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DC and RF characteristics of In0.52Al0.48As/In0.7Ga0.3As HEMTs at 300 and 16 K

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Improvement of DC Performance and RF Characteristics in GaN-Based HEMTs Using SiN x Stress-Engineering Technique

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Improvement of DC Performance and RF Characteristics in GaN-Based HEMTs Using SiN[sub.x] Stress-Engineering Technique

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Analysis for DC and RF Characteristics Recessed-Gate GaN MOSFET Using Stacked TiO 2 /Si 3 N 4 Dual-Layer Insulator

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Analog/RF characteristics of a 3D-Cyl underlap GAA-TFET based on a Ge source using fringing-field engineering for low-power applications

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DC and RF characteristics of 20 nm gate length InAlAs/InGaAs/InP HEMTs for high frequency application

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Effect of source-drain spacing on DC and RF characteristics of 45 nm-gate AlGaN/GaN MIS-HEMTs

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DC and RF characteristics of In 0.52 Al 0.48 As/In 0.7 Ga 0.3 As HEMTs at 300 and 16 K

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RF characteristics of 0.13-μm NMOS transistors for millimeter-wave application

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DC and RF characteristics of In^sub 0.52^Al^sub 0.48^As/In^sub 0.7^Ga^sub 0.3^As HEMTs at 300 and 16 K

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DC and RF characteristics of In sub( 0.52)Al sub( 0.48)As/In sub( 0.7)Ga sub( 0.3)As HEMTs at 300 and 16 K

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RF characteristics of 0.13-[micro]m NMOS transistors for millimeter-wave application

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Effect of source-drain spacing on DC and RF characteristics of 45 nm-gate AlGaN/GaN MIS-HEMTs

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Effect of source-drain spacing on DC and RF characteristics of 45 nm-gate AIGaN/GaN MIS-HEMTs

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A Basic Study on RF Characteristics of Meander Line Employing Periodic Ground Structure on GaAs MMIC for Application to Miniaturization of RF Components

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Improvements of AlN/GaN MISFET DC and RF characteristics with in situ deposited Si^sub 3^N^sub 4

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Improvements of AlN/GaN MISFET DC and RF characteristics with in situ deposited Si sub( 3)N sub( 4)

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Improvements of AIN/GaN MISFET DC and RF characteristics with in situ deposited Si3N4

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Improvements of AlN/GaN MISFET DC and RF characteristics with in situ deposited Si 3 N 4

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Recent Advances in Flexible RF MEMS

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